Registration Number
0216U010245,
0116U003954
, R & D reports
Title
Photo-thermo-acoustic transformation and ultrafast masstransfer in silicon and cadmium telluride under nanosecond laser irradiation
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Head
Vlasenko Alexandr Ivanovich,
Registration Date
23-12-2016
Organization
Institute of Semiconductor Physics of National Academy of Sciences of Ukrain
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It is shown that the local non-equilibrium leads to a non-monotonous concentration profile at the mass-transfer in the system of metal film/semiconductor at pulsed laser irradiation of semi-infinite crystal (plateau formation) and for a thin crystal (peak formation). Transmission spectra in the range of 800 - 1100 nm, the transmission and reflection spectra in the range of 1.4 - 25 microns, and the photoluminescence spectra at T = 5 K in the energy range 1,35-1,7 eV for high-resistance single CdTe: Cl and solid solution Cd0.9Zn0.1Te are measured. The reflection spectra of CdTe single crystals in the range of 0,2-1,7 microns before and after laser irradiation in the energy range of 66 - 164 mJ/cm2, (532 nm, t=7 ns) has been obtained. It is shown the increase of reflection of the crystals at given laser irradiation due to differences in optical characteristics (complex refractive index) subsurface layer and volume.
Product Description
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Велещук Віталій Петрович
Власенко Зоя Костянтинівна
Генцарь Петро Олексійович
Гнатюк Володимир Анастасійович
Левицький Сергій Миколайович
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2020-04-02
