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Information × Registration Number 0216U010324, 0116U005667 , R & D reports Title Theoretical and experimental research of current flow mechanisms in n+ and n+-n-Si ohmic contacts with high electron depletion in contact region popup.stage_title Head Konakova R.V., Registration Date 03-01-2017 Organization Institute of Semiconductor Physics popup.description2 The new transfer mechanisms under which responsibility for current flow in contacts metal-semiconductor with a high concentration of dislocations at the interface between a metal bridges, combined with dislocations, while limiting diffusion current of electrons leads. Using structural and morphological studies of contacts to heavily doped n-Si shown that the formation of ohmic contact to the Si thin layer while annealing at T = 450 ° C for 10 minutes there is a high density of structural defects, including dislocation loops (up to 1010 cm-2). Using metallographic analysis shows that the annealing contact even before the recrystallizationed metal layer may form grafts. The method of determining the specific contact resistance in the study of vertical structures with the metal-n + Si doping steps and n + -n and n-n +, based on the solution of the Laplace equation. With this method it was determined contact resistance ohmic contacts Au-Ti-Pd-n + -n-n + -Si, which is about 10-6 ohm cm2. The proposed method allows to control the process of forming the mesa structure by examining changes in the electrical properties of structures between cycles of digestion. By electro studies have shown that in all investigated samples brushed or polished silicon an increase in the specific contact resistance with increasing temperature, which indicates that the proposed mechanism of current transport.5481 Product Description popup.authors Дуб М.М. Капітанчук Л.М. Кудрик Я.Я. Міленін В.Г. Охріменко О.Б. Редько Р.А. Редько С.М. Романець П.М. Сай П.О. Саченко А.В. Сліпокуров В.С. Шинкаренко В.В. popup.nrat_date 2020-04-02 Close