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Information × Registration Number 0217U000083, 0112U000895 , R & D reports Title Research heternyh properties of radiation defects in semiconductors popup.stage_title Head Litovchenko Piotr G., Registration Date 17-01-2017 Organization Institute for Nuclear Research of National Academy of Sciences of Ukraine popup.description2 Object of study - a highresistivity single-crystal silicon doped by izovalent mpurities and irradiated by nuclear particles. Purpose - obtaining data on the spatial distribution of radiation defects and their interaction with impurities and growth defects in silicon before and behind path braking ions (H, He). Determine the mechanism of influence irradiation by light ions in the formation and annealing of defects in the run and behined path run ions in silicon crystals and formulated recommendations for the use of radiation-thermal treatment of silicon to modify its properties in thin layers of crystals. Research results: Comparative studies of the proton and neutron action on silicon monocrystals showed the same efficiency for complex radiation defects introduction such as disorder regions whereas the effectiveness of the point defects introduction like type A - centers was 2-3 orders higher at proton irradiation. In proton braking zone with energy 43 MeV in silicon annealed at 800°C there is formation of dislocations and their clusters. After increasing of the annealing to 900 - 1000°C in all segments of the growth layers in silicon sample particles of a new phase and defects that accompany them were formed. This effect was observed at 50°C below behind path for protons in the crystal than in zone before path. The model of the modification of the main levels of known radiation defects in silicon and germanium was offered. Modification of vacancy defects in neutral state does not change the energy of the defect in silicon and germanium. It was investigated the influence of the magnetic field with the induction to 14 T and g-radiation photons (60Co radiation) doses up to 1,2*1018 q/sm2 conductivity wiskers Si1-xGex (х = 0,03) with a resistivity = 0,008 - 0,025 Ohmxcm at temperatures 4,2-300 K. It was found that crystal resistivity changes slightly at irradiation, while there are significant changes in magnetoresistance. It was shown that the magnetoresistance changes are associated with the defect creation at irradiation that cause delocalization of charge carriers in the crystal impurity zone. Product Description popup.authors Барабаш Людмила Іванівна Бердниченко Світлана Василівна Варніна Валентина Іванівна Васильківський Анатолій Степанович Воробйов Володимир Герасимович Гайдар Галина Петрівна Долголенко Олександр Петрович Конорева Оксана Володимирівна Кочкін Василій Іванович Ластовецький Володимир Францевич Макуха Олександр Миколайович Марченко Лариса Сергіївна Пінковська Мирослава Богданівна Петренко Ігор Віталійович Полівцев Леонід Анлрійович Старчик Маргарита Іванівна Тартачник Володимир Петрович Шматко Галина Григорівна popup.nrat_date 2020-04-02 Close