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Information × Registration Number 0217U000085, 0112U000895 , R & D reports Title Research heternyh properties of radiation defects in semiconductors popup.stage_title Head Litovchenko Piotr G., Registration Date 17-01-2017 Organization Institute for Nuclear Research of National Academy of Sciences of Ukraine popup.description2 Research object - binary semiconductor compounds and solid solutions irradiated nuclear particles. Purpose - investigating of thermal stability of simple and complex defects introduced by various types of ionizing radiation, study mechanisms that should cause emergence of long term relaxation processes occurring in irradiated materials and influents on the optical absorption, radiative recombination in binary semiconductor compounds . Investigated current-voltage characteristics (CVC) of output GaP-LEDs and irradiated by electrons with E = 2 MeV, by fast neutrons reactor (E = 2 MeV) and a - particles with E = 27,2 MeV. Research results: Discovered increasing of tunnel component at CVC of irradiated GaP-LEDs. Arise of tunnel currents associated with the introduction of radiation defects in the depleted region p-n-junction. A main role in the growth of nonradiative components belong to inter levels tunneling carriers. Diodes irradiated by g-quant's Co60, evident the effect of low doses, based on activation by irradiation of nonequilibrium radiation defects. Main role in this process belong to high levels of ionization lattice. In green LED's there is a small gradient distribution of dopants. Radiation causes pertly-term alignment reduced nonhomogeni of distribution N (x). Investigated current-voltage characteristics (CVC) of output GaP-LEDs and irradiated by electrons with E = 2 MeV, by fast neutrons reactor (E = 2 MeV) and a - particles with E = 27,2 MeV. Measurements were carried out automatically in the in-interval of temperatures 77 -300 K. At low temperature curves VAC (T < 90 K) revealed N- and S-area negative differential resistance. The growth of direct current for low-volt area irradiated samples caused by redistribution of voltage drop on the base and p-n-junction. Of great importance to the removal of media while a - exposure associated with high levels of ionization characteristic of this type of particles. Product Description popup.authors Варніна Валентина Іванівна Васильківський Анатолій Степанович Воробйов Володимир Герасимович Гайдар Галина Петрівна Долголенко Олександр Петрович Конорева Оксана Володимирівна Кочкін Василь Іванович Ластовецький Володимир Францевич Литовченко Михайло Вадимович Макуха Олександр Миколайович Малий Євгеній Вікторович Марченко Лариса Сергіївна Пінковська Мирослава Богданівна Петренко Ігор Віталійович Старчик Маргарита Іванівна Тартачник Володимир Петрович Шматко Галина Григорівна popup.nrat_date 2020-04-02 Close