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Registration Number

0217U000224, 0114U000677 , R & D reports

Title

Developvent of the technology of growth of nanostructured carbonized materials and silicon carbide for opto- and microelectronics

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Head

Lysenko Volodymir Sergiyovych,

Registration Date

24-01-2017

Organization

Institute of Semiconductor Physics

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The effect of discharge powder and working gases flowrate on interatomic bonding and photoluminescence was studied. It is shown that in case of using silicon carbide target (as well as silicon target) increase of carbon incorporation in a-SiOC:H results in development of strong visible photoluminescence. It is found that decay time of PL is of order of nanosecond or even hundreds of picoseconds. Emission exhibited obvious spectral dispersion with decrease of relaxation time as energy of emission is increased. From comparing of FTIR transmission and reflection spectra it is suggested that surface layer of a-SiOC:H films has rather polymer-like structure.

Product Description

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Васін Андрій Володимирович
Назаров Олексій Миколайович
Русавський Андрій Вадимович

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2020-04-02