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Information × Registration Number 0217U000372, 0116U002528 , R & D reports Title The physical basis for the functioning of the new generation of high-performance solid-state detectors based on nanostructures popup.stage_title Head Skryshevsky Valeri, Доктор фізико-математичних наук Registration Date 30-01-2017 Organization Taras Shevchenko Kiev University popup.description2 The optical and electrical phenomena were investigated, as well as the photoelectric effects at surface of the nanostructured semiconductor transducers in terms of the possibility of their application in sensors. The suitability of the sensor structure based on a deep p-n transition for creation of chemical sensors with selectivity function was demonstrated. The effect of surface modification with nanocomposite materials on the sensor properties of the structures was studied. It was showed experimentally (by way of impedance spectroscopy) that the sensor structures based on nano GaAs can be used as sensors for ethanol and acetone vapors with electrical conversion principle. The technologies of silicon nanocrystals formation in the matrix of SiO2 nanoheterostructures were proposed. The influence of technological process on the properties of nanocrystals was investigated. The mechanisms of conductivity of SiOx films obtained by LPCVD method were analyzed. An automated system was developed for in-situ monitoring of parameters for thin layers growth of porous silicon Product Description popup.authors Іванов Іван Іванович Гаврилко Максим Олександрович Гаврильченко Ірина Валеріївна Евтух Анатолій Антонович Кисловець Олександр Сергійович Козинець Олексій Володимирович Костюкевич Олександр Миколайович Литвиненко Сергій Васильович Мілованов Юрій Сергійович Манілов Антон Ігорович Марін Володимир Володимирович Пилипова Ольга Вікторівна Скришевський Валерій Антонович Федорченко Микола Іванович Циганова Ганна Іскаківна Шулімов Юрій Григорович popup.nrat_date 2020-04-02 Close