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Information × Registration Number 0217U001178, 0112U002349 , R & D reports Title Physical and physico-technological aspects formation of modern semiconductor materials and functional structures for nano - and optoelectronics popup.stage_title Head Belyaev O.Ye., Registration Date 26-01-2017 Organization Institute of Semiconductor Physics popup.description2 The goal of the project was complex study of novel physical effects observed in advanced semiconductor nanostructures as well as possibility of their application in devices of modern electronics. To approach the goal a number of technology processes was elaborated, a wide spectrum of semiconductor materials, heterostructures and nanoobjects has been studied. The most important results are: - technology for enhancement of transmission in IR range of semiinsulating Gallium Arsenide and HgCdTe, that one includes plasma treatment followed by deposition of antireflection and protective coating consisted of diamond-like carbon film; - interference lithography for creation of periodic nanostructures with using of vacuum photoresists based on Germanium chalcogenide layers that is more convenient comparing to arsenic-based chalcogenide photoresists; - photoelectrochemical method for fabrication two-dimensional structures of macroporous Silicon; - technology for fabrication hybrid semiconductor heterostructures aimed for molecular electronics; - technology for fabrication ohmic contacts to AlN, InN, GaN, AlхGa1-хN and synthetic diamond consisted of diffusion barriers based on refractory metals as well as nano-amorphous composite of refractory metals borides; - growth technology of optic Germanium large single crystals (up to 20 kg) for modern thermovision systems; - novel difractometry and nano-probe methods for investigation low-dimensional semiconductor and hybrid heterosystems; - methods of electrical diagnostics for low-dimensional dielectric (including high-k dielectrics) and IV group semiconductors (С, Si, SiC) and devices on their base; - possibility for creation uncooled and cooled to Т = 78 К sub-THz and THz receivers based on CdxHg1-xTe has been shown. Technology road is elaborated and pilot samples of sub-THz and THz receivers are presented - hot electron semiconductor bolometers as well as detectors with built in p-n- junction based on thin films of CdxHg1-xTe (0,22<х<0,3). The results obtained are considerable contribution to development of fundamental study in area of semiconductor physics and semiconductor devices and will promote for progress of high-tech industry in Ukraine. Product Description popup.authors Євтух А.А. Індутний І.З. Власенко О.І. Карачевцева Л.А. Клюй М.І. Конакова Р.В. Литовченко В.Г. Лозовський В.З. Павелець С.Ю. Томашик В.М. popup.nrat_date 2020-04-02 Close