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Information × Registration Number 0217U003083, 0112U005082 , R & D reports Title Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 17-01-2017 Organization Scientific Center "Institute for Nuclear Research" of National Academy of Sciences of Ukraine popup.description2 The influence of gamma-irradiation on the concentration and mobility of majority charge carriers in germanium and silicon is investigated. In the oxygen-containing samples of n-Ge and n-Si, and in the compensated crystals of n-Si, the mobility is shown to grow anomalously with irradiation dose in the region of combined scattering. A model is proposed which is based on the partial neutralization of scattering center charges by those of the radiation defects produced by irradiation mainly around the scattering centers. This model qualitatively accounts for the data obtained experimentally. The changes of temperature dependences of charge carrier mobility in n-Si single crystals, grown by the Czochralski method, which were annealed and cooled under various conditions, have been investigated. The crystals with resistivities 0.3 and 4.4 Ohm cm were annealed at 1200 and 500 ^oC during 2 hours. The annealing was accompanied by fast or slow cooling. It was shown that mobility of free carriers in the case of impurity scattering is determined not only by thermal-annealing conditions but the rate of cooling. It was found that the introduction of the germanium impurity in n-Si, grown by the Czochralski method, increases its radiation hardness of about an order of magnitude. It was assumed that germanium in silicon is a recombination center for the Frenkel pairs, which suppresses the introduction of deep defects of the vacancy type. In p-silicon samples doped with boron impurity р-n conversion occurs under introduction of isovalent germanium impurity into the silicon crystals and the long thermal annealing (up to 300 hours) at 450 ^оС. The substantial decrease in the effectiveness of the formation of thermodonors in the experiments with the convertible samples due to the doping of silicon crystals by the germanium impurity was established. Product Description popup.authors Анохін Ігор Євгенович Барабаш Людмила Іванівна Верцімаха Ганна Віталіївна Гайдар Галина Петрівна Зінець Олег Сергійович Карпенко Андрій Якович Ластовецький Володимир Францевич Литовченко Петро Григорович Полівцев Леонід Андрійович Сугаков Володимир Йосипович Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close