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Information × Registration Number 0217U003085, 0112U005082 , R & D reports Title Defect formation and kinetic effects in the irradiated and thermally treated semiconductors and nanostructures on their basis popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 17-01-2017 Organization Scientific Center "Institute for Nuclear Research" of National Academy of Sciences of Ukraine popup.description2 The thermal stability of radiation defects in silicon has been studied. It was found that the radii of capture of the radiation defects (vacancies, divacancies, A centers and others) by the interstitial oxygen and nodal carbon are in the range from 3 to 4 of the silicon lattice constant. The values of the annealing activation energy of divacancy, A-center, interstitial carbon, E-center, interstitial silicon atom, di interstitials of silicon have been calculated. These parameters are in good agreement with those of other authors. The annealing of the main radiation defects in silicon (A-centers, E-centers, divacancies, etc.) was theoretically described based on the experimental data obtained by many authors. The parameters, characterizing this process (the activation energies and the frequency factors), have been determined and the various mechanisms and reactions, which set conditions for annealing of defects, were also proposed. For gas sensorics needs, a silicon surface has been modified by the accelerated charged particles which form tracks. The influence of irradiation with 6.8 MeV protons, 27.2 MeV alpha-particles, and heavy ions (^40Ar, ^131Xe, and ^209Вi) on the optical and adsorption properties of n-Si and SiO2/Si structures with nanopores has been studied. The modification of optical constants of n-Si specimens subjected to the proton or alpha-particle irradiation was found to be caused by the destruction of a near-surface layer of the material and to be accompanied by an enhancement of the surface roughness. Тhe irradiated structures revealed a higher sensitivity to the adsorption of ammonia and acetone molecules. It was found that the most developed pore surface and the largest changes of the optical constants were observed in specimens irradiated with bismuth ^209Bi ions. A number of technological experiments on growing of the SiGe whiskers has been carried out in the closed halogen system Si-Au-Pt-B-Br by the method of chemical transport reactions. The optimum technological conditions for obtaining from the gaseous phase the Si1-xGex whiskers with х = 0.01 - 0.08 and transverse dimensions of 0.1 - 80 мкм were defined. It was found that the samples of Si1-xGex solid solution which correspond to the composition of х = 0.03 are the most homogeneous on distribution of germanium. It is shown that the samples of namely this composition are characterized by a maximum value of microhardness. Product Description popup.authors Анохін Ігор Євгенович Барабаш Людмила Іванівна Верцімаха Ганна Віталіївна Гайдар Галина Петрівна Зінець Олег Сергійович Кібкало Тетяна Іванівна Ластовецький Володимир Францевич Литовченко Михайло Вадимович Литовченко Петро Григорович Макуха Олександр Миколайович Полівцев Леонід Андрійович Сугаков Володимир Йосипович Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close