Search academic texts

Information × Registration Number 0217U003518, 0112U002479 , R & D reports Title The study of nonequilibrium processes in semiconductor structures with a modified surface layer. popup.stage_title Head Ptashchenko Aleksandr, Registration Date 05-05-2017 Organization Odesa I.I.Mechnikov national university.Pervomaisk institute. popup.description2 Object of the research are the semiconductor structures with a modified surface layer. The aim of the work is creation of an experimental data base on non-equilibrium processes in the semiconductor structures with a modified surface layer, as well as establishing mechanisms of the mentioned processes. Research methods are an analysis of electrical, photoelectrical and photolumi-nescence characteristics of semiconductor structures, as well as radiographic methods, optical and atom-force microscopy, laser ellipsometry, physics-mathematics modeling and quantum-chemical digital calculations. The mechanism of the influence of wet ammonia vapors on the defects forma-tion on the real silicon crystal surface is established and the parameters of this proc-ess with quantum-chemical digital calculations are estimated. A significant enhancement of the p-n junctions parameters as gas sensors is reached with a surface doping. Some experimental methods of the estimation of the deep surface centers parameters in Si and GaAs are elaborated and proved. A possibility of the p-n junction negative resistance forming by adsorption processes is established. A method of a surface breakdown detection in p-n junctions is elaborated and patented. The regularities of the laser radiation effect on the photoluminescence characteristics of GaP crystals and GaP-InGaP heterojunctions, formed by laser doping, are established. The influence of the silicon substrate orientation and the electrochemical etching regime on the porous silicon structure and characteristics is found. The results of the work are introduced in the educational process at the Physics Department by creation of lectures courses and special workshops. Forecast assumptions about the object of research development is the ability of using of the semiconductor structures with a modified surface layer to creation of high sensitive low size gas sensors and solar cells with high performance parameters. Product Description popup.authors Євтушенко Ніна Германівна Богдан Ольга Василівна Гільмутдінова Валерія Рафаелівна Довганюк Генадій Віталійович Мірошниченко Олексій Іванович Маслєєва Наталя Миколаївна Пастернак Наталя Миколаївна Печеряенський Олександр Вікторович Птащенко Федір Олександрович Севастян Альона Прокопівна Солошенко Віктор Іванович Стукалов Сергій Анатолійович popup.nrat_date 2020-04-02 Close