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Information × Registration Number 0217U004304, 0115U000855 , R & D reports Title Radiation effects in semiconductor sensors popup.stage_title Head Vikulin Ivan Mikhailovich, Registration Date 30-01-2017 Organization National Telecommunication Academy of Odessa named after A.S. Popov popup.description2 The object of study: section 1 - Materials for sensors sensitive p - n- structure, semiconductor resistor elements, transistor structures and sensor elements integrated sensor circuits; section 2 - one transition magnitotranzistorov, bipolar one collector, two collector bipolar magnitotranzistorov, magnitotiristory, field magnitotranzistorov magnetocontrollable and chips; section 3 - transistor structures for sensors, pressure-sensitive resistor elements and semiconductor p-n- structure sensitive to gases resistor elements and semiconductor MOSFET structure; section 4 - EL injection systems for sensors, semiconductor components, sensor systems and sensor elements integrated circuits sensor structures that are sensitive to radiation. The purpose of work: section 1 - receive specific changes the electrical, functional and dynamic parameters of semiconductor sensor elements: p - n- structures of semiconductor resistor element, transistor structures and sensor elements as a result of radiation, the development of theoretical models of interpretation of the effects of radiation on such parameters; section 2 - getting specific changes the electrical, functional and dynamic parameters of semiconductor components sensors: one transition magnitotranzistorov bipolar odnokollektornyh, bipolar dual-collector magnitotranzistorov, magneto thyristors, field magnitotranzistorov and magnetically chips as a result of radiation, the development of theoretical models of interpretation of the effects of radiation on such parameters ; section 3 - to provide specific changes the electrical, functional and dynamic parameters of the heat-sensitive semiconductor transistor elements, structures that are sensitive to the action of pressure and gas sensors as a result of radiation. Product Description popup.authors Веремьєва Г.В. Воронов Д.О. Горбачов А.Е. Красова В.А. Криськів С.к. Курмашев Ш.Д. Марколенко П.Ю. popup.nrat_date 2020-04-02 Close
R & D report
Head: Vikulin Ivan Mikhailovich. Radiation effects in semiconductor sensors. (popup.stage: ). National Telecommunication Academy of Odessa named after A.S. Popov. № 0217U004304
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