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Information × Registration Number 0217U004894, 0117U007006 , R & D reports Title Development of technology for increasing of radiation hardness of Cd(Zn)Te crystals for increase in operation time of radiation detectors based on them popup.stage_title Head Nasieka Yuriy Mykolayovych, Registration Date 22-11-2017 Organization Institute of Semiconductor Physics popup.description2 Optical non-destructive diagnostics of the as-grown detector crystals Cd (Zn) Te doped with impurities (In, Al, Mn) with different concentrations was carried out. The investigated crystals are irradiated with fast electrons (radiation dose 10^7 Rad). The effect of radiation on the defect-impurity state of these crystals and their dependence on the type of dopant and its concentration was established by the photoluminescence and Raman spectroscopy methods. The form and concentration limits of doping impurities are established, which contribute to an increase in the radiation resistance of detector structures and, at the same time, does not lead to a significant decrease in the resistivity. Product Description popup.authors Бойко М.І. Коломис О.Ф. Насєка В.М. Пилипенко Н.А. Рарата С.В. Стрельчук В.В. Циканюк Б.І. popup.nrat_date 2020-04-02 Close