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Information × Registration Number 0217U006519, 0117U002910 , R & D reports Title Development of the extreme ultraviolet interference lithography technologies for a fabrication of nanosized plasmonic structures "metallic grating-semiconductor heterostructures" and investigations of the structures as core elements of terahertz radiation sources. popup.stage_title Head Korotieiev Vadym Vyacheslavovych, Registration Date 14-09-2017 Organization Institute of Semiconductor Physics popup.description2 Тhe work is devoted to a complex study of the microwave characteristics of hybrid plasmon structures such as the "metal grating-semiconductor heterostructure" for their application as the core elements of terahertz radiation generators and detectors with electrical pumping and electrical control of operating frequencies. Within the reporting period, the research was focused on the development of the theories of nonlinear interaction of electromagnetic radiation with drifting electron gas. In particular, the nonlinear effect of microwave radiation detection under the resonant excitation of two-dimensional plasmons in a drifting electron gas is analyzed. On the basis of a self-consistent solution of the system of Maxwell's equations and nonlinear equations of hydrodynamics in the second order of perturbation theory, the expression for the photoresponse voltage is obtained. It is shown that sequential consideration of second-order corrections of perturbation theory in Maxwell's equations leads to the appearance of an additional factor in the expression of the photoresponse, which takes into account the radiative losses. The theory was applied to the analysis of THz properties of plasmon structures based on quantum AlGaAs / GaAs and InAs / InGaAs heterostructures. The effect of an optically thick dielectric substrate and the carrier heating effect at high drift velocities on the spectral characteristics of the transmittance / absorption coefficients and the shape of the photoresponse voltage spectra are analyzed. It was found that in the range of applied electric fields of 200-400 V / cm, the photoresponse voltage can reach tens of mV for external signals with a power density of 1 W / cm2 in the frequency range of 0.3-1 THz. Recommendations for the rational design of THz radiation detectors based on hybrid plasmon structures have been developed. Based on the obtained results, technological tasks were formulated for the German participants in the project for the manufacture and testing of hybrid plasmon structures, which are planned within the framework of the 2nd stage of the project.5481 Product Description popup.authors Бєляєв Олександр Євгенович Вайнберг Віктор Володимирович Кочелап Вячеслав Олександрович Кухтарук Сергій Миколайович Лящук Юрій Миколайович Наумов Андрій Вадимович Порошин Володимир Миколайович Сингаївська Галина Іванівна popup.nrat_date 2020-04-02 Close
R & D report
Head: Korotieiev Vadym Vyacheslavovych. Development of the extreme ultraviolet interference lithography technologies for a fabrication of nanosized plasmonic structures "metallic grating-semiconductor heterostructures" and investigations of the structures as core elements of terahertz radiation sources.. (popup.stage: ). Institute of Semiconductor Physics. № 0217U006519
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Updated: 2026-03-24