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Information × Registration Number 0217U006664, 0115U000209 , R & D reports Title 3. Physical principles of creation of new elements of optically-electronic devices on a base mono- and nanoсrystallical silicon carbide popup.stage_title Head Voronov Sergey Alexandrovich, Registration Date 11-12-2017 Organization Faculty of аircraft and space systems NTUU "KPI" popup.description2 The mechanism and features of influence of the nanosize crystalline overstructure on the electronic zone structure of different polytypies SiC and on the basis characteristics of electrical breakdown of р-n structures on the basis of mono- and nano-crystalline silicon carbide are develeped. It allowed to explain spectral and polarizational characteristics of separate micronic areas of local breakdown of microplasmas and their temperature dependence, crystallography direction of electric-field and to get from these data new information about the nature of basic bands of radiation. The character of energy distribution on the charge of high-energy carriers, intensity of ionization processes, correlations of electronic and hole-type ionising at the breakdown are determined. The suggested model of "ideal" point source of optical radiation, for which new methodologies are realized for the first time and a detailed study of influence of technological factors, temperature, hard radiation on electric, fluctuational, electroluminiscent, polarizational characteristics are undertaken. The new technological methods of improvement of structure of breakdown of p-n junction produced with the help of Al3+ implantation in warmed up to 2000-2300 K film of SiC - 6Н are suggested. The perspective of creation on this basis standard broadband sources of optical radiation in the range of 250-1000 nm is proved. Laboratory standards of sources of radiation with subnanosecond pulses, high temperature and long-term stability are developed. Product Description popup.authors Івченко Поліна Олександрівна Генкін Олексій Михайлович Генкіна Віра Костянтинівна Родіонов Володимир Миколайович Шаблатович Андрій Миколайович popup.nrat_date 2020-04-02 Close