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Information × Registration Number 0217U006764, 0117U003693 , R & D reports Title Graphene-on-ferroelectric devices for advanced nonvolatile memories and ultra-sensitive sensors. popup.stage_title Head Morozovska Anna Nikolaevna, Registration Date 19-12-2017 Organization Institute of physics NASU popup.description2 The purpose of the research is to construct a theory of the physical principles of the operation of graphene-on-ferroelectric for the creation of the newest devices of nonvolatile memory and sensitive sensors. An innovative theoretical approach combining the Landau-Ginzburg-Devonshire-Khalatnikov theory to describe the nonlinear dynamics of polarization in a ferroelectric substrate with electrodynamics, semiconductor physics, elasticity theory, and quantum-mechanical approaches for describing electric transport in graphene-on-ferroelectricity was used to perform the research. The influence of electric fields and mechanical deformations on the electrophysical state of graphene-on-ferroelectrics is calculated in a self-consistent manner. Particular attention is paid to the control of the graphene conductivity by means of temperature and time dynamics of the domain structure of the ferroelectric, dimensional and gradient effects. As a result of the research work, an analytical description of hysteresis type memory effects in a field transistor based on graphene-on-ferroelectric has been developed, taking into account dipole layers on the free surface of graphene and localized states on its interfaces. The theory of conductivity p-n junctions in a graphene channel on a ferroelectric substrate, created by a 180-degree ferroelectric domain structure, is considered, and cases of different modes of current, from ballistic to diffusion, are considered. The role of size effects in such systems is established.The results of the research should be used to issue recommendations for improving the characteristics of field transistors with a graphene channel, cells of non-volatile ferroelectric memory with arbitrary access, sensors, and also for miniaturization of various functional nanoelectronics devices. The results of the research were published in 4 papers in leading USA journals (Journal of Applied Physics - 1, Physical Review Applied - 2, Physical Review B - 1), and 1 article - in the electronic archive. Product Description popup.authors Єлісєєв Євген Анатолійович Курчак Анатолій Іванович Морозовська Ганна Миколаївна Хіст Вікторія Володимирівна popup.nrat_date 2020-04-02 Close