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Information × Registration Number 0218U000145, 0116U002919 , R & D reports Title A study of changes in the physical properties of semiconductors and devices on their basis with different combinations of external influences. popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 22-01-2018 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 It was established that in the region of braking of protons with energy of 6.8 MeV, the structural defects associated with the introduction of hydrogen into the silicon lattice look like "pores". With an increase in the annealing temperature above 600^оС, the detachment of the irradiated part of crystal with a thickness of 360 micrometer was revealed, which corresponds to a mean free path of 6.8 MeV protons in silicon. It was shown that the formation of the dislocations and their aggregates are observed in the region of braking of protons with energy of 43 MeV in silicon annealed at 800^оС. When the annealing temperature was raised to ~ 1000^оС, the formation of the new-phase particles and defects accompanying them was found in silicon growth layers. It was revealed that the emission spectrum of green electroluminescent GaP diodes at 77 K consists of four lines, the existence of which is due to the annihilation of excitons bound on isolated nitrogen atoms and paired complexes of the NN type. It was shown that the exciton emission is several times more sensitive to the presence of radiation defects in the sample than the donor-acceptor radiation. It was established that the ultrasonic treatment of silicon samples irradiated with gamma-quanta enhances the migration of interstitial carbon atoms, destroying the radiation defects "nodal phosphorus-interstitial carbon", and also reduces the probability of configurational restructuring of divacancies. The concentration dependences of the anisotropy parameter of thermo-emf of electron-phonon drag in a wide range of concentrations (from 10^12 to 10^17 cm^-3) were investigated on the n-type conductivity germanium and silicon single crystals. It was established that the indicated parameter in germanium (unlike silicon) is low-sensitive to the presence of impurities in crystals up to concentrations of the order of 10^15 cm^-3. Product Description popup.authors Єрмольчик Володимир Олександрович Варніна Валентина Іванівна Воробйов Володимир Герасимович Долголенко Олександр Петрович Конорева Оксана Володимирівна Ластовецький Володимир Францевич Литовченко Петро Григорович Макуха Олександр Миколайович Малий Євген Вікторович Пінковська Мирослава Богданівна Петренко Ігор Віталійович Старчик Маргарита Іванівна Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close