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Information × Registration Number 0218U000146, 0116U008468 , R & D reports Title Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures. popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 22-01-2018 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 The sharp distribution of impurities within the p-n junction for red GaP LEDs and a predominantly linear one for green are revealed. As a result of irradiation with fast-pile neutrons, the increase in the probability of the tunnel breakdown in green diodes was obtained, and of the avalanche in red ones. The dependence of radiation hardness of the light-emitting InGaN/GaN heterostructures on the substrate, on which they are formed, was established: LEDs on a silicon-carbon substrate (as compared to the silicon substrate with gold-tin contact) have better electrical and luminescent properties, but the neutron irradiation leads to the large changes in their characteristics. The double influence of ultrasonic treatment on GaP LEDs was established: on the one hand, the destruction of excitons bound on the Zn-O complex and the formation of dislocation networks and mobile dislocation packets, which are regions of nonradiative recombination, and on the other hand, the assistance to the annealing of radiation defects in the sample and the reduction of the number of microplasmas. The prospects of using ultrasonic waves for improving the characteristics of GaP LEDs with a high defect concentration, especially those irradiated with fast particles are shown. In silicon irradiated by neutrons, the time of precipitation of oxygen was reduced due to the additional introduction of the precipitate nuclei at the participation of primary radiation defects created by irradiation. Due to the gettering effect of impurities and defects on the oxygen precipitates, a significant improvement in the quality of the material was obtained, which is important in the manufacture of semiconductor devices. The model for the behaviour of interstitial silicon atoms in clusters of defects was proposed, which explains the temperature dependence of the mobility of electrons when measuring the Hall effect with a reducing and a reverse increasing in the temperature of silicon samples grown by various methods. Product Description popup.authors Варніна Валентина Іванівна Воробйов Володимир Герасимович Долголенко Олександр Петрович Конорева Оксана Володимирівна Макуха Олександр Миколайович Малий Євген Вікторович Пінковська Мирослава Богданівна Петренко Ігор Віталійович Старчик Маргарита Іванівна Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close