Registration Number
0218U000651,
0113U003385
, R & D reports
Title
"Development of a microelectronic sensor for express control and analysis of the hydrogen sulfide content in the air"
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Head
Litovchenko Volodymyr Grygorovych,
Registration Date
06-02-2018
Organization
Institute of Semiconductor Physics
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R&D Report: 45 p., 25 figures, 5 tables, 25 references. As a result of the work, the project developed: (1) the concept of the formation of catalytically active electrodes based on porous silicon matrices and transition metal nanoclusters / oxides for microelectronic detectors of environmentally harmful gases (H2S). The mechanism for increasing the catalytic activity of transition metals with a completely filled d-band consists in changing the filling of d-states by electrons (the appearance of d-holes over the Fermi level) in the formation of surface nanoclusters of transition metal oxides; (2) developed a reproducible technology for the production of catalytically active electrodes based on nanostructured surface layer of weakly oxidized (with tunnel thin oxide) silicon with built-in transition metal clusters and their oxides (Cu, CuOx, W, WO3) in pores; (3) establishes the mode of recording H2S presence in the air at room temperature by the combined adsorption of H2S and H2O vapor to increase sensitivity of sensors to H2S in the environment; (4) a portable microelectronic hydrogen sulfide sensor was developed and manufactured, operating in the range of H2S concentrations of 1 - 100 ppm in the air at room temperature by fixing the voltage shift at the level of planar zones (UFBs) under the influence of adsorbed hydrogen sulfide molecules in proportion to their concentration. The prototype of a microelectronic sensor for low hydrogen sulfide concentrations in the air has been developed and manufactured and optimization of its operating parameters has been carried out. Key words: microelectronic sensor, hydrogen sulfide, porous Si, metal clusters, threshold of registration of H2S.
Product Description
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А.І. Курчак
Горбанюк Т.І.
Л.М. Шугаєва
С.М. Мусаєв
С.С. Дударенко
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2020-04-02
