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Information × Registration Number 0218U001360, 0117U006196 , R & D reports Title Structuring heteroepitaxial systems HgCdTe/CdZnTe by radiation Ag+ ions for IR and MM detectors popup.stage_title Head Udovitska Ruslana Serhiivna, Registration Date 01-02-2018 Organization Institute of Semiconductor Physics popup.description2 At present, there is a significant number of experimental results indicating the formation of regular structures in condensed media, including periodic and quasi-periodic, under the influence of external radiation irradiation, or flows of charged particles, neutrons, or ?-quanta. One of the important features of the structures that arise during this is that their wavelength is much larger than the constant crystal lattice. At the same time, in modified materials of this kind, there are specific physical properties that are a factor in their careful study. Known results of the structuring of metal surfaces, thin films of FeNi / Au, Ag2S with Ag and Cu + ions and Si, Ge basic semiconductors. The dominant mechanisms were identified and modern theoretical models were created: Bradley-Harper; Cuerno; Norris and Barabas, according to which the formation of ordered nanostructures is the result of the instability caused by the dependence of the ion spray coefficient of the target on the degree of curvature of the surface of the treated solid. They are reduced to the level of ion flow energy, which provides a statistical description of the formation of nanostructures. In modern production, nanostructured materials are represented by active functional elements in various sensors, for example, chemistry and gas, as photocatalysts; solar cells; superfine luminescent and phosphorescent materials. As to the ion structurization, sputtering and the effect of mechanical stresses, the analysis of literary sources has shown that there are no results on the formation of nano and microstructures on the surface of CdHgTe. Product Description popup.authors popup.nrat_date 2020-04-02 Close