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Information × Registration Number 0218U001403, 0115U005017 , R & D reports Title Terahertz properties of semiconductor nanostructures with high carrier mobility to create radiation detectors. popup.stage_title Head Sizov F.F., Доктор фізико-математичних наук Registration Date 07-02-2018 Organization Institute of Semiconductor Physics popup.description2 The project is aimed at studying the possibility of creating multi-spectral photodetectors in the range of sub-THz / THz / IR radiation on the basis of nanostructures and layers CdхHg1-хТe. A new approach is proposed for detecting IR radiation with the help of layers of narrow band and compound CdHgTe based on thermomechanical deformations and piezoelectric potentials on the heterogeneous CdHgTe and the substrate (Si / GaAs). Design of a prototype of such an IR photodetector without the use of electric displacement and cooling. Experimental results are obtained and an assessment of the sensitivity of such a structure at the level D=109 (W-1cm Hz-0,5) (для ?f = 1 Hz) is made. Dissipation of test specimens was investigated and their electrical characteristics were investigated. Modeling of scattering and mobility of carriers in a quantum well is carried out. Received an illumination effect by a gradient structure based on layers of a diamond-like carbon film a-C:H:N (DLC) which frames the photodetector on both sides. Product Description popup.authors Гуменюк-Сичевська Жанна Віталіївна Забудський Вячеслав Володимирович Мележик Євген Олександрович Сахно Микола Вадимович Сизов Федір Федорович Смірнов Олексій Борисович Цибрій Зеновія Федорівна Шевчик-Шекера Анна Володимирівна popup.nrat_date 2020-04-02 Close