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Information × Registration Number 0218U001530, 0116U000809 , R & D reports Title Active solid state elements for generating, frequency multiplication and radiation of electromagnetic waves in the terahertz range popup.stage_title Head Arkusha Yury Vasilievich, Botsula Oleg Viktorovich, Registration Date 21-02-2018 Organization Kharkov National University named after V.N. Karazin popup.description2 A report on research effort is contain: 89 pages., 53 figures, 52 references. HETEROJUNCTION, GRADED LAYER, ELECTRIC FIELD STRENGTH, IMPACT IONIZATION, RESONANCE TUNNELING BORDERS, ELECTROMAGNETIC FIELD. A research object are the effects associated with impact ionization, tunneling and transfer electron transport, which lead to the generation of millimeters and terahertz ranges electromagnetic oscillations or obtaining them by frequency multiplication and the formation processes of electromagnetic fields by semiconductor structures. The aim of this research is to is to search for new and improve existing active elements for generation, frequency and radiation multiplication in the terahertz range. A research method is a mathematical simulation of physical processes in triplet and dual А3В5 based semiconductor structures, including nitride based structure. The Monte Carlo method, hydrodynamic equations model from the Boltzmann equation by employing and Finite-Difference Time Domain Method for solution of Maxwell's equations have being used. Actuality of researches is relating to the necessity of creation of new semiconductor devices for generation radiation in the specified wavelength ranges. A novelty of work is to identify patterns that lead to increasing of the power of existing active elements and modify their structure for increasing the efficiency and operating frequency limits. The new physical phenomena and properties are identified for creating of approaches for constructing of new active elements and structures on their basis for work in the terahertz range. In the work, physical processes in A3B5 semiconductor based devices with resonance-tunnel boundaries and short graded band based diode structures at the present of impact ionization are investigated. To obtain devices for work in a wide frequency range with batter characteristics than existing ones, the optimal configurations of complex semiconductor compounds based diodes with intervalley transfer electron are searched. The possibility of frequency transformation in the terahertz range with the use of active semiconductor elements due to the radiation of electromagnetic waves has been investigated. Product Description popup.authors І. Стороженко В. Зозуля К. Приходько Л. Головко Л. Ткачук М. Полянський О. Боцула О. Ярошенко popup.nrat_date 2020-04-02 Close