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Information × Registration Number 0218U002288, 0117U003568 , R & D reports Title Theoretical and experimental research of current flow mechanisms in n+ and n+-n-Si ohmic contacts with high electron depletion in contact region popup.stage_title Head Konakova R.V., Registration Date 08-02-2018 Organization Institute of Semiconductor Physics popup.description2 The model for formation of contact resistance in the structures Au-Ti-Pd-n + -n-n + -Si with a doping step is proposed. Using the methods of X-ray diffusion scattering analysis in the 2?-, 2?-?- and ?-scans and their complex analysis, an estimate of the density of structural defects in n + layers of Si formed during diffusion of phosphorus, the homogeneity of their distribution over the plate and the internal mechanical voltage and concentration of dislocations. It is established that the optimal parameters of heat treatment during phosphor diffusion to create -n + layer in a thickness of 0.5 microns are: annealing temperature of 925 oC, a duration of 23 min - at low temperatures, the number of defects of the vacancy type is considerably higher, and at higher temperatures there is a significant increase the length of the dislocations that can sprout into the active region. It was found that the highest density of dislocations in the sample occurs when the diffusion = 970 ° C and is 6.68 · 105 cm-2. The temperature dependence of the specific contact resistance ?c (T) for two types of contacts on the basis of Au-Ti-Pd-n + + -nn + -Si was experimentally investigated and it was shown that with the same for metallization and doping n + + -layer of contacts depending on the concentration of the n-layer can be realized as growth, and the falling temperature dependence of a specific contact resistance, which may indicate the decisive role of the falling segment in the current transfer. Product Description popup.authors Дуб М.М. Капітанчук Л.М. Кудрик Я.Я. Міленін В.Г. Охріменко О.Б. Редько Р.А. Редько С.М. Романець П.М. Сай П.О. Саченко А.В. Сліпокуров В.С. Шинкаренко В.В. popup.nrat_date 2020-04-02 Close