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Information × Registration Number 0218U002299, 0117U001509 , R & D reports Title ISP-2017/1 popup.stage_title Head Kladko Vasyl Petrovych, Registration Date 14-02-2018 Organization Institute of Semiconductor Physics popup.description2 Analysis of construction and parameters of technological layers of PD 3307 photodiodes was performed by SIMS, XPS та REM (Cross Section). Composition and main parameters of technological layers that formed the construction of sensitive element microchip were defined. Technological operations were defined and experimental technological route was developed for preparation of indium antimonide plates with chipes of multielements photodetector in medium-infrared range. Topology of testing chip construction was developed. 6 topological photomasks were prepared. Passive coatings of indium antimonide by selfoxide (In3O3+Sb2O3), that formed using oxidation in the electrolyte based on ammonium persulfide were optimized. It was shown that alternative method of passive coatings combined with a protective layer SiNx with thickness ~ 0.35µm, obtained by silan pirolysis (SiH4) in the steam-gas mixture of ammonia with hydrogen (NH4+H2) under low plasma pressure (PECVD). Product Description popup.authors Б.М.Романюк В.Г. Попов В.П. Мельник Н.В. Сафрюк О.В. Дубіківський О.Й. Гудименко О.С.Оберемок С.В.Сапон Т.М.Сабов popup.nrat_date 2020-04-02 Close