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Information × Registration Number 0218U002590, 0114U001834 , R & D reports Title Development and creation of instruments for express control of material parameters for detectors of ionized radiation popup.stage_title Head Glinchuk Konstantin, Strilchuk Oksana, Registration Date 26-04-2018 Organization Institute of Semiconductor Physics popup.description2 The purpose of the project is to adapt the method of luminescent rapid-diagnosis to study the influence of ionizing radiation on the optical and spectrometric characteristics of materials (crystals and films Cd1-xZnхTe) used for the manufacture of ionizing radiation detectors for predicting the processes of radiation degradation of their properties (spectral and dosimetric). On the basis of the complex of quality control and homogeneity of materials for ionizing radiation detectors, equipment was created for investigating their impurity-defective composition before and after the action of ionizing radiation, which would allow recommendations on the continuation of radiation resources of semiconductor detectors. The object of the test of rapid diagnosis were crystals and films Cd1-xZnхTe. The calibration dependences of the position of the maxima h m vs. x were obtained for determining the composition of Cd1-xZnxTe from the measurements at 4.2, 77, and 300 K. A detailed analysis of the luminescence method determination of the composition of Cd1-xZnxTe shows that there is a certain inaccuracy in determining the composition of x by the indicated method. This inaccuracy appears: a) due to some unknown factors that change the position of the maximum of the radiation band induced by bound excitons; b) if the nature of the emission centers (electronic transitions) responsible for the values h m is not reliably established. Product Description popup.authors Воробкало Ф.М. ГлинчукК.Д. Ляпін О.М. Стрільчук О.М. popup.nrat_date 2020-04-02 Close