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Information × Registration Number 0218U003442, 0114U000677 , R & D reports Title Developvent of the technology of growth of nanostructured carbonized materials and silicon carbide for opto- and microelectronics popup.stage_title Head Lysenko Volodymir Sergiyovych, Registration Date 13-02-2018 Organization Institute of Semiconductor Physics popup.description2 Heterostructures a-SiOC:H/Si with ZnO semitransparent contacts and carbon-enriched a-SiOC:H thin films as light emission layer have been fabricated and their electroluminescent properties have been studied. It has been developed the method of deposition of a-C(:Si:O:H) thin films by high pressure/low discharge power deposition regime for enhancement of photoluminescence efficiency. It has been found that such films demonstrate high efficiency of photoluminescence in broad spectral range from near ultraviolet to near infra-red. Spectral characterization of PL properties shows that emission band is composed by two components with intensities peaked at about 360-380 nm and 450-500 nm, and with with relative contribution of the bands depended on methane flow rate during deposition process. Product Description popup.authors Євтух Валерій Анатолієвич Васін Андрій Володимирович Назаров Олексій Миколайович Русавський Андрій Вадимович Смірна Віра Іванівна popup.nrat_date 2020-04-02 Close