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Information × Registration Number 0218U005325, 0118U004593 , R & D reports Title Technology for improvement of solar cell characteristics by deposition of diamond-like films popup.stage_title Head Klyui Nikolay Ivanovich, Registration Date 11-09-2018 Organization Institute of Semiconductor Physics popup.description2 As a result of the implementation of the stage 1, it was found that it is expedient to use a-SiCx films as single-layer antireflection films for silicon solar cells (SC), including ones doped with nitrogen. Diamond-like carbon films, whose refractive index in the region of photosensitivity of silicon SCs may reach values of 1.5-1.75, can be used in combination with a-SiCx films as double-layer antireflection coatings for such SCs. It is proposed to use a new class of a-SiCx films, namely nitrogen-containing films (a-SiC: H: N), that allows us to change the electrical properties of the films and use them for the creation of HIT-solar cells. Product Description popup.authors Душейко Михайло Григорович Клюй Микола Іванович Лозінський Володимир Борисович Лук"янов Анатолій Миколайович Северінова Ірина Дмитрівна popup.nrat_date 2020-04-02 Close
R & D report
Head: Klyui Nikolay Ivanovich. Technology for improvement of solar cell characteristics by deposition of diamond-like films. (popup.stage: ). Institute of Semiconductor Physics. № 0218U005325
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Updated: 2026-03-23