Registration Number
0218U006012,
0117U004455
, R & D reports
Title
Thin-film semiconductor photosensitive materials for solar cells
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Head
Yatchyshyn Joseph J.,
Registration Date
06-03-2018
Organization
Lviv Polytechnic National University
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The object of the study is chemical systems with a complex of functional properties; chemical processes and physical phenomena accompanying the hydrochemical synthesis of ZnS and ZnSe semiconductor thin films, determine their composition, structural, morphological, optical properties; the creation of film structures on amorphous and crystalline substrates, their optical, electrophysical and photoelectric properties. The aim of the work is to develop the theoretical and practical fundamentals of a technologically simple, low-cost, flexible process for the synthesis of ZnS and ZnSe thin films for the production of thin-film photosensitive elements of solar cells. Investigation methods - semiempirical method of convergence of the reaction system to a minimum of energy in quantum-chemical modeling in the environment of "MOPAC 2012"; method of chemical deposition from aqueous solutions for the synthesis of ZnS and ZnSe thin films and structures based on them; X-ray diffraction for studying of films structures, optical and X-ray fluorescent spectroscopy for the determination of optical characteristics and elemental composition; scanning electron and atomic force microscopy for the study of surface morphology, profilometry and inversion voltammetry for the investigation of film thickness, methods of molecular-adsorption analysis for carrying out kinetic studies. The concentration limits of the initial substances and the range of pH values for which deposition of zinc sulphide and zinc selenide films, without impurities of by-products with using of different nature ligands are justified. The elemental selenium as a chalcogenizer is proposed to be used for the synthesis of ZnSe films. The phase composition, surface morphology, thickness, optical and structural parameters of the obtained coatings was established and it is shown that the nature of the complexing reagent affects the properties of ZnS and ZnSe films. The effective activation energies of СD processes of ZnS and ZnSe films using various complexing agents are determined. A quantum-chemical simulation of intermediate stages of ZnS and ZnSe thin films synthesis reactions was conducted for the first time. Experimental samples of ZnS and ZnSe semiconductor thin films as well as thin film structures of ZnS/CdS, ZnS/HgS, ZnS/CuS, ZnS/Ag2S, ZnS/ZnO, ZnS/Si, ZnSe/ZnS, ZnSe/CdS, ZnSe/HgS, ZnSe/Ag2S were prepared.5481
Product Description
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Гладь Роман Ігорович
Гумінілович Руслана Ростиславівна
Созанський Мартин Андрійович
Стаднік Віталій Євгенійович
Шаповал Павло Йосифович
Ятчишин Йосип Йосипович
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2020-04-02
