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Information × Registration Number 0218U006117, 0116U005093 , R & D reports Title Protection of zirconium shells of fuel elements of nuclear reactors with the aid of silicon carbide, preparation of polycrystalline silicon by reduction of its tetrachloride with the aid of atomic hydrogen, deposition of epitaxial structures with the aid of gas phase, plasma-chemical and sublimation techniques popup.stage_title Head Shirokov Boris Mikhajlovich, Доктор технічних наук Registration Date 22-03-2018 Organization National Science Center "Kharkiv Institute of Physics and Technology popup.description2 Researches of renewal of tetrakhlorida silicon are executed in low temperature neravnovesnoy argon-vodorodnoy plasma of induction digit. Raschitano resistance of plasma at different powers, inlaid in a digit. It is set a spectral analysis, that in a digit there is atomic hydrogen reactionary ability of which higher molecular. The thermodynamics calculation of renewal of tetrakhlorida silicon atomic hydrogen showed that a process flowed with power expenses below, than at renewal molecular hydrogen. It is probed, in the process of plaz-mokhimicheskogo renewal of tetrakhlorida silicon alloying of silicon phosphorus and coniferous forest. Influ-ence of concentration of alloying admixtures is studied on electric and optical properties of kondensatov. Product Description popup.authors Євсюков Олексій Ігоревич Бакай Катерина Сергеевна Дериземля Анатолій Миколайович Журавльов Олександр Юрьевич Зуєва Татьяна Миколаевна Капустін Віталій Леонідович Крохмаль Сергей Олександрович Мартиненко Віктор Григорович Пелипець Юрий Олександрович Радченко Володимир Іванович Семенов Микола Олександрович Стригуновський Сергей Олександрович Суща Аліна Анатольевна Хижняк Дмитрий Олександрович Хованський Микола Олександрович Широков Борис Михайлович Шиян Олександр Васильович Щербакова Валентина Володимирівна popup.nrat_date 2020-04-02 Close
R & D report
Head: Shirokov Boris Mikhajlovich. Protection of zirconium shells of fuel elements of nuclear reactors with the aid of silicon carbide, preparation of polycrystalline silicon by reduction of its tetrachloride with the aid of atomic hydrogen, deposition of epitaxial structures with the aid of gas phase, plasma-chemical and sublimation techniques. (popup.stage: ). National Science Center "Kharkiv Institute of Physics and Technology. № 0218U006117
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Updated: 2026-03-22