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Information × Registration Number 0218U006408, 0114U002520 , R & D reports Title Design and establishment of multilayer diffraction grating technology for optochemical sensors and their approbation in electronic industry. Step 3: "Development of design and technological documentation on optochemical sensor based on Schottky barrier" popup.stage_title Head Dmitruk Mykola Leontiyovich, Registration Date 07-05-2018 Organization Institute of Semiconductor Physics popup.description2 Parameters and manufacturing technology of polarization-sensitive plasmon-polariton photodetectors based on Schottky barrier Au/n-GaAs, Au/n-Si with anticorrelated relief of metal film were optimized to create optochemical sensors. The numerical simulation of sensitivity showed that by changing of the cross-sectional shape of chalcogenide nanowires a significant increase in sensitivity of signal intensity to a change of the wavelength dT/dL can be achieved. Maximum sensitivity dT/dL = 0.1 nm ^ -1 have been obtained for the structures with a trapezoidal profile of chalcogenide nanowires with a ratio of the smaller base of the trapezoid to a larger one 0.2, which is 3 times higher than for the equivalent sinusoidal profile, whith sensitivity dT/dL = 0.034 nm^-1 . The elements with optimized geometrical parameters of the anticorrelated relief (period 749 nm, the modulation depth of 80 nm and duty cycle of 1: 1, trapezoidal profile stroke) were made on n-GaAs substrate doped with 1.2x10^16cm^-3 and n-Si doped with ~ 10^14cm^-3. We obtained the following electrical parameters of photodetectors based on GaAs: the barrier height is 1.0 eV; the diffusion length of minority carriers Lp = 0.3 mm, the nonideality factor of barrier n = 1.2. The value of photosensitivity at the peak of the surface plasmon polariton resonance S = 0.12 A/W, the polarization sensitivity ip/is = 6. The polarization-sensitive photodetectors based on Si have the electrical parameters: the barrier height ~ 0.6 eV, the nonideality factor of barrier n= 1.5. The value of photosensitivity at the maximum plasmon resonance S = 0.125 A/W, the polarization sensitivity ip / is = 4.2. Developed optochemical sensors based on these photodetectors and films of resorcinol[4]calixarenes showed limiting sensitivity to the presence of ethanol vapor in air of 75 ppm. Product Description popup.authors Коровін Олександр Вадимович Мамикін Сергій Васильович Соснова Марія popup.nrat_date 2020-04-02 Close
R & D report
Head: Dmitruk Mykola Leontiyovich. Design and establishment of multilayer diffraction grating technology for optochemical sensors and their approbation in electronic industry. Step 3: "Development of design and technological documentation on optochemical sensor based on Schottky barrier". (popup.stage: ). Institute of Semiconductor Physics. № 0218U006408
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Updated: 2026-03-22