Registration Number
0218U008033,
0117U004457
, R & D reports
Title
Converters of physical quantities based on the basis of semiconductor micro- and nanostructures as elements of microsystem technology of information and measurement systems
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Head
Druzhinin Anatoly Oleksandrovych,
Registration Date
03-01-2019
Organization
Lviv Polytechnic National University
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As a result of investigations of magnetotransport properties of wire-like silicon crystals and A3B5 compounds, the pre-conditions for the metal-insulator transition were revealed. According to theoretical models for the strong-lensed InSb, GaSb samples, the basic parameters that characterize the charge transfer mechanism are calculated. The concentration of acceptor and deep donor impurities in wire-like crystals of different diameter is determined. The presence of a negative magnetoresistance in a transverse magnetic field has been established in doped crystals with a concentration of a doping impurity corresponding to a metal-insulator transition. It is assumed that the nature of the temperature dependences of magnetoresistance in Si crystals and the concentration of the alloying impurity of boron corresponding to metal-insulator transition in the range of low temperatures is determined by the Kondo effect associated with the scattering of charge carriers on electrons with opposite spins localized on impurities.
Product Description
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Буджак Ярослав Степанович
Бутрик Сергій Володимирович
Гарасим Ірина Данилівна
Кутраков Олексій Петрович
Лук'янченко Антон Вікторович
Лях-Кагуй Наталія Степанівна
Малик Орест Петрович
Нічкало Степан Ігорович
Островcький Ігор Петрович
Пасинкова Олена Андріївна
Пошивак Олександр
Сиротюк Степан Ігорович
Ховерко Юрій Миколайович
Щербань Наталія Олексіївна
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2020-04-02
