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Information × Registration Number 0218U100023, 0118U004150 , R & D reports Title Development of technology for increasing of radiation hardness of Cd(Zn)Te crystals for increase in operation time of radiation detectors based on them popup.stage_title Head Naseka Yuri , Registration Date 17-12-2018 Organization V. Lashkaryov Institute of semiconductor physics popup.description2 The doping of CdZnTe crystals with In and Ge is provided. The choice of dopants is caused by the closeness in the ion radii of Cd(0.97A), In(0.94 A) and Ge(0.92A). The electron irradiation of doped and undoped crystals was provided. The electron energy is 1MeV, fluence - 5E14 cm-1, equivalent dose - 110 kGy. By using the methods of PL and Raman spectroscopies the defect-impurity state of undoped, doped and irradiated crystals is idetified. With the aim of comparing of radiation and thermal effects the thermall annealing of the studied crystals was provided at the temperatures 100 and 200C. It was shown that the thermall annealing at the mentioned temperatures don't affect substantially on the defect structure of unirradiated crystals but in the case of irradiated crystals the restoration of the initial properties are was registered. Product Description popup.authors popup.nrat_date 2020-04-02 Close