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Information × Registration Number 0218U100038, 0118U004151 , R & D reports Title Novel LED heterostructures based on n-ZnO nanostructures and p-GaN epitaxial layers for high-performance ultraviolet radiation sources and energy-saving lighting systems popup.stage_title Head Nikolaenko Andrii S., Registration Date 18-12-2018 Organization V. Lashkaryov Institute of semiconductor physics popup.description2  The technology of synthesis of n-ZnO nanostructures on p-GaN substrates by vapor phase growth and hydrothermal synthesis have been optimized and ZnO nanostructures have been obtained under optimal conditions for the growth of columnar nanostructures. The surface morphology of the samples was studied. The methods of processing and applying electrical contacts to LED heterostructures are optimized, their electrophysical characterization and measurement of electroluminescence spectra, depending on the magnitude and direction of bias voltage, have been performed. The obtained spectra are considered in color coordinates and it is determined that the warmest white light for the eye is obtained in the case of heterostructures with n-ZnO grown by the vapor deposition method on the p-GaN substrates. The analysis of the dependence of the intensity of electroluminescence on the injection current and the influence of the centers of the non-radiation recombination is established. The effect of mixing time on the electrophysical and light-emitting characteristics of n-ZnO/p-GaN diode heterostructures obtained by hydrothermal synthesis was studied. The influence of rapid thermal annealing on the structural and optical properties of ZnO nanostructures implanted with Mn ions has been investigated. The influence of p-type Al-N doping and thermal annealing on the structural, optical and electronic properties of ZnO:Al,N films is investigated. Product Description popup.authors popup.nrat_date 2020-04-02 Close