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Information × Registration Number 0218U100070, 0116U001445 , R & D reports Title Nanostructured semiconductor heterojunctions and Schottky diodes for electronics, optoelectronics and solar energy popup.stage_title Head Mаrianchuk Pаvlo D., Доктор фізико-математичних наук Registration Date 22-12-2018 Organization Yuriy Fedkovych Chernivtsi National University popup.description2  The paper present studies of the conditions for obtaining planar and nanostructured heterojunctions and Schottky diodes created by deposition of thin films of graphite, metals and their oxides and nitrides on arrays of silicon nanowires and semiconductor crystals with a modified surface CdTe, Cd1-хZnхTe, Hg3In2Te6 with predetermined and reproducible electrical, photovoltaic properties; developed the method of non-destructive polarization-phase diagnostics of their structure and the method of determining the active area of nanostructured surface-barrier structures; established the laws of physical processes in the created photosensitive structures were depending on the design features and technological processes. Product Description popup.authors popup.nrat_date 2020-04-02 Close