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Information × Registration Number 0219U001106, 0116U008468 , R & D reports Title Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures. popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 14-01-2019 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 The curves of the process of transformation of A-centers and the curves of changes in the intensity of IR-absorption bands associated with metastable states of СіОі defect are calculated upon annealing of electron-irradiated silicon. The activation energies of accumulation and annealing of the precursors of the formation of the stable СіОі-defect (1.1; 1.7; 2.5 eV) were determined. The model of metastable СіОі-pair was proposed. The relationship was revealed between the appearance of generalized divacancy levels in n-Si and p-Si samples irradiated by fast-pile neutrons and the configuration transitions of divacancy from the state with greater distortion into the state with smaller distortion and vice versa. It was shown that the deformation of silicon lattice caused by the interstitial-type defects reduces the probability of the configuration restructuring of divacancies, as a result of which the concentration of generalized levels of twice negatively Ес - 0.23 eV - in n-Si) and positively (Еv + 0.283 eV - in р-Si) charged divacancies is decreased. It was established that long-term high-temperature annealing (1200^oC, 72 h) of n-Si samples, regardless of the method of phosphorus doping, promotes the generation of deep donor centers in the case of both slow and rapid cooling, and significantly reduces the charge carrier concentration. In samples doped through the melt, the concentration decreases by 1.5 - 2 times, and in transmutation-doped ones - by 1.5 - 3.5 times, and in the latter case, the effect is more pronounced with fast cooling. It was revealed that in the field of an ultrasonic wave, the intensity of the luminescence of GaP LEDs monotonously decreases; after the termination of the action of ultrasound, a gradual recovery of the intensity of radiative recombination is observed. It was established that the degradation phenomena arise as a result of the destructive effect of ultrasound on the bound excitons and the appearance of the pile-up of dislocations that are non-equilibrium at room temperature. Product Description popup.authors Варніна Валентина Іванівна Воробйов Володимир Герасимович Конорева Оксана Володимирівна Макуха Олександр Миколайович Малий Євген Вікторович Пінковська Мирослава Богданівна Петренко Ігор Віталійович Старчик Маргарита Іванівна Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close