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Information × Registration Number 0219U001238, 0118U001921 , R & D reports Title Development and implementation into the industrial production of the microwave components technology of terahertz range on the basis of gallium arsenide popup.stage_title Head Belyaev Olexandr Yevgenovych, Доктор фізико-математичних наук Registration Date 21-01-2019 Organization Institute of Semiconductor Physics popup.description2 The aim of the work is to develop technology and implement the production of the domestic competitive number of GaAs Gunn diodes of the submicron range, which will be at the level of the best world analogues or surpass them. The urgency of this problem is the need to create technology of arsenic-based elemental base for ultrahigh-frequency applications in aerospace engineering, navigation and location, medicine and safety. Two companies are involved in the project: Electron-Karat Scientific Production Enterprise, which provides the growth of epitaxial films of gallium arsenide, and the state enterprise Orion, which produces Hunn's chip diodes, their construction and research. And also the Institute of semiconductor physics named after. V.E.Lashkarev NAS of Ukraine, where theoretical calculations and research of test plates were conducted. This project can be the first step towards the creation of a closed cycle of manufacturing arsenic-galium microelectronic components, which is relevant from the point of view of development of domestic high technologies. Methods of research - electrophysical research, Auger electron spectroscopy, raster electronic and optical microscopy, theoretical calculations. The conditions of generation of ultrahigh-frequency radiation in short (nanosized) diode structures A3B5 with transport of hot electrons in strong electric fields with the presence of negative differential conductivity on the voltage-current characteristic are studied and the possibility of realizing a generation with limited accumulation of volume charge without the formation of strong field domains is shown. The obtained results indicate the way for the practical realization of compact, efficient semiconductor diodes of ultrahigh-frequency radiation (terahertz range) that will work at room temperatures. The developed technology of testing TLM structures and chips of Hunn diodes has been proposed. The technique of data processing of electrophysical investigations is proposed, which allows to obtain more precise results of measurement of contact resistance and to obtain additional information at the expense of simultaneous analysis of statistical and spatial distributions. The technological base for the manufacture of Hunn chip diodes has been prepared. The conducted tests of chips have shown the possibility of their use in the Hunn diodes to work in the range of operating frequencies 78-118 GHz. Product Description popup.authors Кочелап В"ячеслав Олександрович Кудрик Ярослав Ярославович Шинкаренко Володимир Вікторович popup.nrat_date 2020-04-02 Close