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Information × Registration Number 0219U001834, 0115U006920 , R & D reports Title Research on crystal formation of Bi-Te based materials in plane gaps popup.stage_title Head Anatychuk Lukyan Ivanovych, Registration Date 11-03-2019 Organization Institute of Thermoelectricity, Academy of Sciences of Ukraine and Ministry of Education and Science of Ukraine popup.description2 R&D Report: 92 page, 39 drawings, 74 source of information. THERMOELECTRICITY, THERMOELECTRIC MATERIALS, CRYSTALLINE FORMATION, GROWTH TECHNOLOGY. The object of the study is a bulk crystalline thermoelectric material based on bismuth and antimony chalcogenides, methods and equipment for the growth of Ві-Те - based thermoelectric materials in the flat slits. The purpose of the work is to create material science bases for the development of technology for the growth of Ві-Те- based thermoelectric materials in flat slits, which allows receiving thermoelectric material in the form of ingots of flat form with areas of cleavage perpendicular to the trigonal axis of crystals, oriented along the sides of the container. As a result of the project fulfilment, a cycle of theoretical studies on the kinetics of crystalline formation of anisotropic Bi-Te based thermoelectric materials in flat slits was carried out. The peculiarities of the crystal formation of Bi-Te based materials considering the anisotropy of the growth rate and the influence of surface phenomena were determined. The influence of surface phenomena on the orientation of the cleavage planes of single crystals of solid solutions based on bismuth telluride regarding the vertical walls of the slit container has been determined. The physical model of the process of growing single crystals in the Bi-Te -based thermoelectric materials has also been developed. The influence of the geometry of the slit container on the orientation and the degree of parallelism of the cleavage planes of solids on the basis of bismuth telluride has been determined. The temperature distribution in the slit crystallizer and the influence of temperature modes on the crystallization front have been determined. The optimum temperature conditions for the formation of a single crystal structure in slit crystallizers during the growth of Bi-Te based solid solutions have been found. Considering the results of theoretical studies, a special technological equipment for growing Bi-Te based thermoelectric materials in flat slits, incorporating the method of directed solidification from the melt, has been designed and developed. A set of experimental work has been carried out on this equipment to determine the optimal conditions for growing single-crystal samples of Bi-Te based thermoelectric materials. Based on the results of theoretical and experimental studies obtained, a technology of growing high quality Bi-Te based thermoelectric for the manufacture of thermoelectric cooling modules of high reliability for long-term operation in space apparatuses has been developed. Conditions for receiving the report: by agreement. 180 Antonovich str., 03150, Kiev-171, Product Description popup.authors Горський Петро Володимирович Ліліцак Василь Ністорович Ніцович О.В. Разіньков Валерій Васильович popup.nrat_date 2020-04-02 Close