Search academic texts

Information × Registration Number 0219U003361, 0116U002528 , R & D reports Title The physical basis for the functioning of the new generation of high-performance solid-state detectors based on nanostructures popup.stage_title Head Skryshevsky Valeri, Доктор фізико-математичних наук Registration Date 11-02-2019 Organization Taras Shevchenko Kiev University popup.description2 Prototypes of sensor structures with electronic nose function based on deep p-n junction were created. Their efficiency can essentially depend on the electrical conductivity type of the illuminated area. Semiconductor silicon substrate with thin dielectric layer on its surface can play a function of electronic screen to create images of biological cells. Characteristics of composite hydrogen energy sources operation based on porous silicon feeding sensor systems were studied. Technologies of nanomaterials production for sensor structures (silicon nanocrystals in SiO2 matrix, multilayer SiO2-ncSi-SiO2 structures) were elaborated and optimized. Free porous silicon carbide (PSiC) layers were shown to be perspective material for gas sensors creation. Physical properties of nanomaterials (silicon nanowires (Si-NW)) for use in sensor structures and possibilities of surface modification (Si-Gd-O layers) as well were studied. Linking schemes among gas or liquid sensors and Android based mobile devices were elaborated. Adaptation of artificial neuron net for tasks of express mode analysis of gas or liquid ambient was proposed. Product Description popup.authors Іванов Іван Іванович Бунак Сергій Валерійович Гаврильченко Ірина Валеріївна Евтух Анатолій Антонович Козинець Олексій Володимирович Костюкевич Олександр Миколайович Литвиненко Сергій Васильович Мілованов Юрій Сергійович Манілов Антон Ігорович Марін Володимир Володимирович Опилат Віталій Якович Пилипова (Стеблова) Ольга Вікторівна Скришевський Валерій Антонович Федорченко Микола Іванович Циганова Ганна Іскаківна Шулімов Юрій Григорович popup.nrat_date 2020-04-02 Close