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Information × Registration Number 0219U003605, 0116U000809 , R & D reports Title Active solid state elements for generating, frequency multiplication and radiation of electromagnetic waves in the terahertz range. popup.stage_title Head Arkusha Yury Vasilievich, Botsula Oleg Viktorovich, Registration Date 04-02-2019 Organization Kharkov National University named after V.N. Karazin popup.description2 The object of research are effects associated with impact ionization, tunneling and intervalley electron transport, which lead to electromagnetic oscillations in millimeters and terahertz ranges generation or them obtaining at expense of frequency multiplication and formation processes of electromagnetic fields by semiconductor structures. The aim is to search for new and improve existing active elements for generation, frequency multiplication and radiation in the terahertz range. The research method is the mathematical modeling of physical processes in semiconductor structures with intervalley electron transport and impact ionization, quantum-sized structures based on double and triple A3B5 semiconductors, including nitrides using the Monte Carlo method, solution of the Boltzmann equation for the case of a displaced Maxwellian distribution for electrons and solving the Maxwell equations in time area. Relevance of work due to the need to create new semiconductor devices for generation and radiating elements in the specified wavelength ranges. The novelty of the work is to identify patterns that lead to increase the power of existing active elements and modify their structure for increasing the efficiency and operation frequency, identifying of new physical phenomena and properties, and creating new active elements and structures basis on their for operation in the terahertz range. In this work are investigated physical processes in devices with different active lateral boundaries. There are resonant tunneling, n +, tunnel-triode and tunnel boundary with a tunnel anode in short diode structures based on graded band semiconductors with impact ionization. The optimal configurations of diodes based on complex semiconductor compounds with intervalley electron transport are searched for work in a wide frequency range, which characteristics exceed existing ones. The possibility of frequency conversion in the terahertz range with using of active semiconductor elements by multiplying, generating harmonics and radiation is investigate. Product Description popup.authors І.П. Стороженко К.Г. Приходько Л.І. Ткачук Л.В. Головко М.Є. Полянський О.В. Боцула О.В. Плотнікова О.В. Ярошенко Ю.В. Аркуша popup.nrat_date 2020-04-02 Close