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Information × Registration Number 0219U100009, 0118U004758 , R & D reports Title Development of the extreme ultraviolet interference lithography technologies for a fabrication of nanosized plasmonic structures "metallic grating-semiconductor heterostructures" and investigations of the structures as core elements of terahertz radiation sources. popup.stage_title Head Korotyeyev Vadym , Кандидат фізико-математичних наук Registration Date 02-01-2019 Organization V. Lashkaryov Institute of semiconductor physics popup.description2 As part of the project, a kinetic theory of plasmon instability, which is induced by an external electric field in the channel of low-doped quantum heterostructures based on AIIIBV semiconductor compounds, was developed. It is shown that in order to generate more low-frequency radiation in the sub-THZ frequency range, epitaxial films of low-alloy GaN can be used in the application of fields of order of 3 kV/cm. Experiments on terahertz spectroscopy of plasmonic structures based on low-doped AlGaN/GaN quantum wells have revealed the effect of increasing the absorption of subtrahertz radiation induced by subwavelength plasmonic elements. Plasmon resonance was identified, and the form of measured transmission spectra was described by theoretical calculations. Product Description popup.authors popup.nrat_date 2020-04-02 Close