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Information × Registration Number 0219U100060, 0117U004020 , R & D reports Title Growth kinetics wires of nanokristal of the AIIIBV connections of a low-temperature CVD-metods popup.stage_title Head Guba Sergii K., Кандидат технічних наук Registration Date 14-01-2019 Organization Lviv Polytechnic National University popup.description2 The theoretical model for the calculation of energy surface characteristics of the InAs quantum dots in the GaAs matrix is expounded. A model is based on the principles of nonequilibrium thermodynamics and physics of surfaces. In the article the results of calculation of the surface energy and adhesion physical quantities and pressures in the vicinity of ribs of InAs quantum points in the GaAs(100) matrix are presented. Using the Jung relation the reasons of the bending profile of the bottom of the quantum dot are established. The results of calculation can be used for estimation the mechanisms of tensions relaxation during the self-organization of InAs quantum dots in GaAs(100) matrix. In this paper defined basic kinetic parameters for the formation of an array of quantum dots of InAs in GaAs matrix using CVD epitaxial method. Product Description popup.authors popup.nrat_date 2020-04-02 Close