Registration Number
0219U100314,
0118U005299
, R & D reports
Title
Functionalization of electrotransport properties of defective graphene via combining strains with modification of microstructure
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Head
Rаdchenko Tаrаs M., Доктор фізико-математичних наук
Registration Date
05-02-2019
Organization
G. V. Kurdyumov IMPh of the N.A.S.U.
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Localized electronic states in the graphene layer are sensitive to deformation. In case of the uniaxial tension, the density of electronic states increases or decreases, depending on the axis of the stretching. The simultaneous effect of perpendicular magnetic field and uniaxial stretching of graphene along zigzag direction contributes to the presence of the band gap in its energy spectrum: the gap becomes more pronounced and even wider than that created via the zigzag tension only. The presence of point or line defects in graphene lowers the Landau peaks, smears them and may even completely suppress, depending on content of defects, their scattering strength and action effective radius. The non-destructive shear deformations can cause a band gap of up to 3 eV, while the combined (shear and tensile) strains – up to 6 eV.
Product Description
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2020-04-02