Search academic texts

Information × Registration Number 0220U000099, 0116U002919 , R & D reports Title A study of changes in the physical properties of semiconductors and devices on their basis with different combinations of external influences. popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 14-01-2020 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 It has been established that the use of alpha particles of the MeV energy range allows one to obtain surface structures of irradiated silicon that are different in morphology and properties. The fundamental possibility of using the surface modified by irradiation as a gas sensor or matrix to create a nanostructured composite material is shown. It was revealed that as a result of ultrasonic treatment of GaAs0.55P0.45 LEDs, the intensity of their luminescence decreases and after the termination of the action of ultrasound, the process of radiation relaxation to the previous values is observed. It was shown that irradiation with electrons with an energy of Е=2 MeV leads to an exponential decrease in the radiation intensity. It has been established that radiation degradation of the electroluminescence intensity occurs due to the introduction of nonradiative levels of defects into the crystal and destruction by their fields of the main emission centers - the bound excitons. An additional short-wave component hv2= 2.206 eV, the existence of which is associated with donor-acceptor transitions between Zn-Sn pairs, was revealed in the electroluminescence spectra of the red phosphide-gallium LEDs GaP(Zn,O) at 77 K, apart from the main emission band hv1=1.845 eV. The features of this band are an increase in intensity at small (up to 50 mA) currents and a decrease due to the thermal effect at large (over 90 mA). The tensoresistance was revealed in unirradiated n-Si crystals at the symmetrical arrangement of the deformation axis with respect to all isoenergetic ellipsoids, the value of which decreased under gamma-irradiation. It was shown that these effects can be explained respectively by a change in the mobility of electrons in the conduction band due to an increase in the transverse effective mass and by the appearance of new deep centers under the action of irradiation. Product Description popup.authors Єрмольчик Володимир Олександрович Варніна Валентина Іванівна Воробйов Володимир Герасимович Конорева Оксана Володимирівна Ластовецький Володимир Францевич Литовченко Петро Григорович Макуха Олександр Миколайович Малий Євген Вікторович Пінковська Мирослава Богданівна Петренко Ігор Віталійович Старчик Маргарита Іванівна Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close