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Information × Registration Number 0220U000100, 0116U008468 , R & D reports Title Defects of radiation and technological origin and their influence on the properties of semiconductor materials and light-emitting diode structures. popup.stage_title Head Gaidar Galyna Petrivna, Registration Date 14-01-2020 Organization Sceintific Center "Inststute for nuclear reaseach National Academy of sciences Ukraine popup.description2 It was established that the donor levels Ec - 0.25 eV, Ec - 0.50 eV and Ec - 0.60 eV with concentrations of 7x10^16, 9x10^16 and 3.1x10^16 cm^-3 correspond to the main compensating centers that appear in р GaP, irradiated with 1 MeV electrons. It was revealed that during the annealing of irradiated crystals, an intense interaction of radiation defects is observed, which leads to the formation of thermostable defects. The effect of radiation-acoustic treatment on the electroluminescence efficiency of the gamma-irradiated (Со^60) GaP samples at 300 K was studied. It was found that small doses of ultrasound (t < 100 min at v = 3 MHz and w = 0.1 W/cm2) increase the quantum yield of LEDs, while with long exposure times, the glow intensity decreases. It was established that annealing of dislocations introduced into GaP by ultrasonic treatment occurs at 400-500^oC. It was revealed that in ultraviolet light emitting diodes with a spectral maximum at a wavelength of 365 nm (InGaN/AlGaN/GaN heterostructures), the current-voltage characteristic at 77 K is S-type due to the transition from a monopolar (electrons) injection regime to bipolar (electrons and holes). It was found that with an increase in the stabilized current in the region of negative differential resistance, a sharp increase in the intensity of the electroluminescence bands (the main ultraviolet band and yellow) occurs due to increased the hole injection and recombination on deep levels of defects. It has been established that transmutation-doped n-silicon crystals, whose temperature dependences of the Hall effect exhibit traces of deep centers, are characterized by high sensitivity to cooling conditions after high-temperature annealing, which is strongly manifested when measuring the effect of tensoresistance (up to a change in its sign). Product Description popup.authors Варніна Валентина Іванівна Воробйов Володимир Герасимович Конорева Оксана Володимирівна Макуха Олександр Миколайович Малий Євген Вікторович Пінковська Мирослава Богданівна Петренко Ігор Віталійович Старчик Маргарита Іванівна Тартачник Володимир Петрович popup.nrat_date 2020-04-02 Close