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Information × Registration Number 0220U000384, 0119U001790 , R & D reports Title ISP-2019/1 popup.stage_title Head Kladko V., Registration Date 03-02-2020 Organization Institute of Semiconductor Physics popup.description2 Laboratory samples of infrared photodiodes were made. Comparison of the photosensitivity of the samples obtained revealed a noticeable difference in the sensitivity of the elements in the infrared spectrum for photodiodes made on different technological routes. Mesode-structure photodiodes with Si3N4 protective dielectric showed high sensitivity in the IR region and low reverse currents. As part of the R&D, satellite housing designs have been developed for InSb crystals of sensing elements with external leads. Product Description popup.authors Мелькик В.П. Романюк Б.М. Сапон С.В. popup.nrat_date 2020-04-02 Close