Registration Number
0220U001161,
0119U002036
, R & D reports
Title
Study of interaction in the systems Germanium - oxide (sulfide, fluoride) of metal of II-IV groups - Boron oxide with the aim of creation of materials for the interference optics of an IR interval of a spectrum
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Head
Zinchenko Viktor Fedosiyovych,
Registration Date
30-01-2020
Organization
A.V. Bogatsky, Physico-Chemical Institute of the National Academy of Sciences of Ukraine
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The general regularities of interaction in Ge - MxOy - B2O3 systems, where MxOy - ZnO, In2O3, GeO2, SnO2, are established. As the electronegativity of metal oxides increases in the ZnO - In2O3 - GeO2 (-SnO2) series, the ability to form complex oxides with B2O3 decreases. The formation of borates in the ZnO - B2O3 (Zn3 (BO3)2, Zn4O (BO2)6 and ZnB4O7) and In2O3 - B2O3 (InBO3) systems has been established by the methods of XRD and IR spectroscopy. At the same time, no chemical interaction was revealed in SnO2 (GeO2) - B2O3 systems, but glass formation occurred instead. The addition of elemental Germanium to these systems affects the nature of the interaction in different ways. In Ge - ZnO - B2O3 and Ge - In2O3 - B2O3 systems, the Ge additive increases the content of complex oxides, especially in the case of the second system, which is caused by the reduction of ZnO and In2O3 residues. In the In2O3 system, through its reduction to the In2O volatile compound, a number of unstable In (I) borates is formed. This promotes the leveling of the volatility of the formed oxides of Germany (II) and Indium (I) and has a positive value for the coating. In the Ge - GeO2 - B2O3 system, optimum conditions for GeO evaporation and vapor condensation on the substrate should be expected due to glass formation. Instead, the disappearance of the SnO2 phase is observed in the Ge - SnO2 - B2O3 system, with the manifestation of immiscibility phenomenon and a partial reduction to Sn (II) and the metallic state. This is indirect evidence of the lack of perspective of the said system, which is obviously related to the increased differences in the volatility of GeO and SnO. Instead, the Ge - In2O3 - SnO2 - B2O3 system, in its behavior, is largely reminiscent of a system with In2O3 in terms of spectral characteristics, indicating that it can be used to produce thin film coatings. The substantial analysis of the GeO - B2O3, GeO2 - B2O3 and ZnO - B2O3 systems showed the ratio of elements in different forms (water-soluble and water-insoluble) and confirmed the results obtained by other research methods.
Product Description
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Єрьомін О.Г.
Антонович В.П.
Вольчак Г.В.
Городнюк В.П.
Магунов І.Р.
Михайлова Т.В.
Садковська Л.В.
Стамікосто Є.В.
Стоянова І.В.
Чівірева Н.А.
Чистов О.С.
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2020-04-02
