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Information × Registration Number 0220U100018, 0117U004461 , R & D reports Title Effect of ionizing irradiations on the modern micro- and nanomaterials for the sensor technics popup.stage_title Head Bolshakova Inessa A., Доктор технічних наук Registration Date 03-01-2020 Organization Lviv Polytechnic National University popup.description2 It was developed a technique for in-situ investigation of electrophysical parameters of III-V semiconductor materials and single-layered graphene under ionizing radiation fluxes’ action. For this technique’s practical implementation, it was developed, manufactured and approbated experimental examples of fixtures and measuring equipment with appropriate software. It was experimentally investigated influence of irradiation by neutrons, electrons and gamma quanta on electrophysical properties of micromonocrystals and nanofilms of In-containing semiconductors (InAs, InSb) doped with different-types impurities. It was developed a technique for irradiation of In-containing III-V semiconductor compounds by neutron fluxes for the purpose of controlled nuclear doping of these materials. It was developed a complex technique for irradiation resistance’s increasing of In-containing III-V semiconductor materials at high radiation doses, which combines methods of metallurgical doping in the process of material growth and nuclear doping in the process of its subsequent neutron irradiation. By means of complex modification of InAs and InSb compounds, it was obtained advanced semiconductor materials of electronic and sensor technology, whose characteristics are stable at fast-neutron irradiation up to fluences 1e22 n/sq.m., which corresponds to radiation loads’ levels for magnetic diagnostic systems’ components, expected in new-generation fusion reactors of ITER type. First in the world, it was confirmed experimentally (in-situ) stability of electrophysical parameters of sensors based on single-layer graphene as well as of its crystal structure (Raman spectroscopy) under neutron irradiation up to fluence 4e20 n/sq.m. For irradiation testing of graphene-based devices in neutron fluxes to higher fluence values, it is necessary to solve a problem of increasing of reliability and thermal stability of metal-graphene electrical contacts, which is planned in further investigations. Product Description popup.authors Vasyliev Oleksandr V. Holyaka Roman L. Guba Sergey K. Humen Stepania S. Kovaliova Nelli V. Kohut Inna V. Kost Yaroslav Ya. Mykhashchuk Yuriy S. Moroz Anatoly P. Pavlyk Bohdan V. Palyniak Ihor V. Radishevskyi Maksym I. Shurygin Fedir M. popup.nrat_date 2020-04-02 Close