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Information × Registration Number 0220U100308, 0119U102502 , R & D reports Title Crystallization of GaN on the seed by a temperature gradient method popup.stage_title Head Rumiantseva Yuliia Yu., Registration Date 15-01-2020 Organization V. Bakul Institute of superhard material of the National Academy of Sciences of Ukraine popup.description2 Based on the literature, thermodynamic parameters for the growth of GaN single crystals and the composition of the Fe-Ga-N alloy solvent were selected. Experiments have been carried out, which result that the temperature interval of possible growth of structurally perfect GaN single crystals at a pressure of 4.4 GPa is 1400-1600 C.  Product Description popup.authors Sadova Yuliia I. Savitskyi Oleksandr V. popup.nrat_date 2020-04-02 Close