Search academic texts

Information × Registration Number 0220U101170, 0118U000242 , R & D reports Title Features of photothermal and photoacoustic processes in low-dimensional semiconductor silicon-based systems popup.stage_title Head Dubyk Kateryna V., Кандидат фізико-математичних наук Registration Date 04-01-2020 Organization Taras Shevchenko National University of Kyiv popup.description2  Object of study: photothermal and photoacoustic phenomena in silicon-based semiconductor systems, in particular in multilayer structures based on porous silicon, when irradiated with harmonically modulated electromagnetic radiation in the visible range. Subject of research: the processes that occur in photothermal and photoacoustic phenomena in these nanostructured silicon-based semiconductor systems when irradiated with harmonically modulated electromagnetic radiation. Purpose: to obtain physical patterns of photothermal transformation and formation of photoacoustic response in semiconductor porous structures based on silicon. Methods of investigation: photoacoustic methods with gas microphone and piezoelectric recording of informative response in irradiation of samples with harmonically modulated or pulsed electromagnetic radiation in the visible range. Mathematical models that describe the features of photothermal transformation in low-dimensional silicon-based semiconductor systems are presented, and a software solution for simulation of photothermal transformation in multilayer structures based on silicon is developed. The dependence of photoacoustic response parameters on the spatial distribution of dielectric functions in the investigated structure, the wavelength of the irradiation source, and the thermal conductivity of the studied multilayer system is established. The dependence of the thermal conductivity coefficient of the multilayer system based on porous silicon on the spatial distribution of periodically arranged submicron layers of porous silicon of different porosity was experimentally obtained. A model is proposed which indicates the presence of thermal resistance of the interface between layers of porous silicon of different porosity. The dependence of the value of this resistance on the difference of porosity between the layers of porous silicon was obtained. Product Description popup.authors Isaev Mykola V. Grebnev Oleg A. Dubyk Kateryna V. Lishchuk Pavlo O. Manʹkovsʹka Yuliya O. Shepela Lesya I. popup.nrat_date 2020-04-02 Close