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Information × Registration Number 0220U101317, 0117U000288 , R & D reports Title Development of scientific and technological foundations for the obtaining of nonlinear optical crystals for generation of terahertz and infrared radiation popup.stage_title Head Pritula Igor M., Доктор фізико-математичних наук Registration Date 07-02-2020 Organization Institute for single crystals NASU popup.description2  Conditions for synthesis of crystalline powder DAST (4-N, N-dimethylamino-4-N-methyl stilbazolium tosylate) were developed. Methanol has been shown to be the most suitable solvent for growing high quality DAST crystals. The design of a growth apparatus for growing nonlinear-optical organic (molecular) crystals has been developed. The optimal growth parameters for the growth of DAST crystals are determined, which are determined by the conditions of use of the crystals in the devices for generating or detecting THz radiation. The relationship between the value of the microhardness of the grown crystals and the nature of the distribution of dislocations in them is shown. An experimental study of second harmonic generation and THz radiation generation in DAST crystals has shown that DAST crystals are proving to be a promising source of broadband THz radiation especially in comparison with known crystalline materials. SiO2 / DAST composites were obtained based on SiO2 matrices with different porosity (23, 48 and 78%). The effect of matrix porosity on the spectral properties of SiO2 / DAST composites is revealed. The position of the DAST luminescence band depends on the porosity of the matrices and is due to the interaction of the DAST cations with the surface of the matrix. The technological conditions for the synthesis of growth raw materials for the growth of binary (GaSe) and ternary (AgGaSe2) chalcogenide compounds have been determined. By Bridgman's method, large blocks of crystalline materials with high optical nonlinearity were produced under excess pressure of inert gas. The effect of chromium doping on the mechanical properties of gallium selenide crystals has been investigated. A method of increasing the microhardness of GaSe crystals is proposed. Product Description popup.authors Bezkrovna Olga M. Voronov Alexei P. Dolzhenkova Elena F. Kovalenko Nazar O. Pritula Igor M. popup.nrat_date 2020-04-02 Close