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Information × Registration Number 0220U104241, 0120U105127 , R & D reports Title Development of a wearable thin-film thermoelectric generator experimental sample with nanostructured p-CuI and n-ZnO semiconductor layers on fabric and polymer flexible bases popup.stage_title Head Klochko Natalia P., Registration Date 15-12-2020 Organization National Technical University "Kharkiv Polytechnic Institute" popup.description2  The objects of research are nanostructured p-CuI and n-ZnO films made by the serial adsorption and reaction of ionic layers (SILAR) method on the surface of flexible polyimide substrates and fabrics made of polyester and cotton as basic semiconductor materials for wearable thin-film thermoelectric generator. The aim of the work is to optimize the process of manufacturing nanostructured p-CuI and n-ZnO films by the SILAR method based on the results of studying their morphology, chemical composition, crystal structure, band gap, electrical and thermoelectric properties. Research methods - X-ray diffractometric analysis (XRD), X-ray fluorescence microanalysis (XRF) with energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), spectrophotometric method for the study of the optical band gap of semiconductor surfaces, semiconductor surfaces, Research results: Nanostructured p-CuI and n-ZnO films made in optimized modes of the SILAR method on the surface of flexible polyimide substrates and fabrics of polyester and cotton, which under standard conditions have a surface resistance R not more than 500 kО, well adhered to substrates and tensile compressive stresses during bending analysis using 100 bending cycles, with a critical bending radius of 1.5 cm. The crystal structure of p-CuI and n-ZnO films is nanocrystalline, single-phase and stable under operating conditions of the wearable TEG in the temperature range 290-340 K The resistivity of the films in the temperature range 290-340 K does not exceed 0.05 Ohm*cm for p-CuI, 50 Ohm*cm for n-ZnO, 0.4 Ohm*cm for n-ZnO: In; Seebeck coefficient not less than 80 mkV/K for p-CuI, 70 mkV/K for n-ZnO, 50 mkV/K for n-ZnO: In; the coefficient of thermoelectric power reaches 25 mkW/(m*K2) for p-CuI, 0.4 mkW/(m*K2) for n-ZnO, 5 mkW/(m*K2) for n-ZnO: In. Product Description popup.authors Zaitsev Roman V. Kirichenko Mykhailo V. lepikova Katerina S. Klochko Natalya P. Kopach Volodymyr R popup.nrat_date 2020-12-15 Close